Silicon carbide in electric vehicles stands for more efficiency, higher power density and performance. Particularly with an 800 V battery system and a large battery capacity, silicon carbide leads to a higher efficiency in inverters and thus enables longer ranges or lower battery costs. Infineon Technologies AG introduces the EasyPACK module with CoolSiC automotive MOSFET technology—a 1200 V half-bridge module with an 8 mΩ/150 A current rating.
With the introduction of the CoolSiC automotive MOSFET technology into the EasyPACK and full automotive qualification, Infineon is now expanding the range of applications for the module family to include high-voltage applications in electric cars with high efficiency and switching frequency requirements. These include HV/HV-DC-DC step-up converters, multi-phase inverters and fast-switching auxiliary drives such as compressors for fuel cells.
CoolSiC Automotive MOSFET technology
The new module is based on Infineon’s silicon carbide trench MOSFET structure. Compared to planar structures, the trench structure enables a higher cell density, resulting in the best-in-class figure of merit. As a result, trench MOSFETs can be operated at lower gate-oxide field strengths for higher reliability.
First-generation CoolSiC automotive MOSFET technology is optimised for use in traction inverters, with a focus on achieving the lowest possible conduction losses, especially under partial load conditions. Combined with the low switching losses of silicon carbide MOSFETs, this enables losses in inverter operation to be reduced by around 60 percent compared to silicon IGBTs.
In addition to optimising performance, Infineon attaches great importance to reliability. It develops and tests CoolSiC automotive MOSFETs with the aim of achieving high short-circuit, cosmic ray, and gate-oxide robustness, which is key for designing efficient and reliable high-voltage applications in electric cars.
The new CoolSiC automotive MOSFET power module is fully qualified to the AQG324 standard.
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